CLUSTER-VARIATION METHOD FOR THE TRIANGULAR LATTICE GASOSORIO R; FALICOV LM.1982; J. PHYS. CHEM. SOLIDS; GBR; DA. 1982-01; VOL. 43; NO 1; PP. 73-79; BIBL. 25 REF.Article

ELECTRONIC THEORY OF ORDERING AND SEGREGATION IN BINARY ALLOYS: APPLICATION TO SIMPLE METALS = THEORIE ELECTRONIQUE DE LA MISE EN ORDRE ET DE LA SEGREGATION DANS LES ALLIAGES BINAIRES: APPLICATION AUX METAUX SIMPLESROBBINS MO; FALICOV LM.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 4; PP. 2343-2357; BIBL. 37 REF.Article

INTERFACE MAGNETIZATION: CU FILMS ON NI(100) = AIMANTATION A L'INTERFACE: COUCHES DE CU SUR NI(100)TERSOFF J; FALICOV LM.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 4; PP. 2959-2961; BIBL. 10 REF.Article

MAGNETIC AND ELECTRONIC PROPERTIES OF NI FILMS, SURFACES, AND INTERFACES = PROPRIETES MAGNETIQUES ET ELECTRONIQUES DE COUCHES MINCES, DE SURFACES ET D'INTERFACES DE NICKELTERSOFF J; FALICOV LM.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 26; NO 11; PP. 6186-6200; BIBL. 27 REF.Article

PHONON RAMAN SCATTERING IN SUPERCONDUCTORSBALSEIRO CA; FALICOV LM.1980; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1980; VOL. 45; NO 8; PP. 662-665; BIBL. 15 REF.Article

NONLINEAR DE HAAS-VAN ALPHEN OSCILLATIONS IN CHARGE-DENSITY-WAVE SYSTEMS.SCHLOTTMANN P; FALICOV LM.1977; PHYS. REV. LETTERS; U.S.A.; DA. 1977; VOL. 38; NO 15; PP. 855-857; BIBL. 18 REF.Article

STRESS AND TEMPERATURE DEPENDENCE OF THE ELECTRONIC PROPERTIES OF N-TYPE SILICON INVERSION LAYERS.KELLY MJ; FALICOV LM.1977; J. PHYS. C; G.B.; DA. 1977; VOL. 10; NO 23; PP. 4735-4752; BIBL. 26 REF.Article

ELECTRONIC STRUCTURE OF INVERSION LAYERS IN MANY-VALLEY SEMICONDUCTORS.KELLY MJ; FALICOV LM.1976; PHYS. REV. LETTERS; U.S.A.; DA. 1976; VOL. 37; NO 15; PP. 1021-1024; BIBL. 17 REF.Article

MAGNETIC PROPERTIES OF THE TRANSITION-METAL MONOXIDES: NIO.KOILLER B; FALICOV LM.1975; J. PHYS. C; G.B.; DA. 1975; VOL. 8; NO 5; PP. 695-707; BIBL. 15 REF.Article

THE ELECTRONIC POTENTIAL IN A METAL CLOSE TO A SURFACE EDGE.KESMODEL LL; FALICOV LM.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 16; NO 10-11; PP. 1201-1204; BIBL. 14 REF.Article

HYPERFINE FIELD AT A POINT INTERSTITIAL IMPURITY IN FERROMAGNETIC NICKEL.PATTERSON BD; FALICOV LM.1974; SOLID STATE COMMUNIC.; G.B.; DA. 1974; VOL. 15; NO 9; PP. 1509-1512; ABS. FR.; BIBL. 16 REF.Article

POTENTIAL OF A POSITIVE TEST CHARGE IN GERMANIUM: APPLICATION TO HYDROGENFALICOV LM; JOOS B.1982; PHILOS MAG., A; ISSN 0141-8610; GBR; DA. 1982; VOL. 45; NO 2; PP. 255-260; BIBL. 16 REF.Article

ELECTRONIC STRUCTURE AND LOCAL ATOMIC CONFIGURATIONS OF FLAT AND STEPPED (111) SURFACES OF NI AND CU = STRUCTURE ELECTRONIQUE ET CONFIGURATIONS ATOMIQUES LOCALES DES SURFACES (111) PLATES ET A GRADINS DE NI ET CUTERSOFF J; FALICOV LM.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 2; PP. 754-764; BIBL. 17 REF.Article

THEORY OF INTERMEDIATE VALENCE FOR SYSTEMS WITH TWO MAGNETIC CONFIGURATIONSSCHLOTTMANN P; FALICOV LM.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 11; PP. 5916-5927; BIBL. DISSEM.Article

NEW APPROACH TO THE THEORY OF INTERMEDIATE VALENCE. I: GENERAL INFORMATIONFOGLIO ME; FALICOV LM.1979; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1979; VOL. 20; NO 11; PP. 4554-4559; BIBL. 24 REF.Article

CORRELATED STATES IN A MODEL TWO-DIMENSIONAL LAYER.DENLEY D; FALICOV LM.1978; PHYS. REV., B; U.S.A.; DA. 1978; VOL. 17; NO 3; PP. 1289-1296; BIBL. 25 REF.Article

BAND THEORY FOR ORDER-DISORDER PHASE TRANSFORMATIONS: CUAUKITTLER RC; FALICOV LM.1978; PHYS. REV., B; USA; DA. 1978; VOL. 18; NO 6; PP. 2506-2514; BIBL. 22 REF.Article

ELECTRONIC GROUND STATE OF INVERSION LAYERS IN MANY-VALLEY SEMICONDUCTORS.KELLY MJ; FALICOV LM.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 15; NO 4; PP. 1974-1982; BIBL. 24 REF.Article

MIXED-VALENCE STATES AT A CRYSTAL SURFACE SMS.RAJAN VT; FALICOV LM.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 21; NO 4; PP. 347-351; BIBL. 19 REF.Article

CALCULATION OF THE SURFACE DENSITY OF ELECTRONIC STATES IN LEAD.MCFEELY FR; FALICOV LM.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 21; NO 4; PP. 343-346; BIBL. 15 REF.Article

ELECTRONIC STRUCTURE OF DISORDERED BINARY ALLOYS.KITTLER RC; FALICOV LM.1976; J. PHYS. C; G.B.; DA. 1976; VOL. 9; NO 23; PP. 4259-4270; BIBL. 20 REF.Article

ELECTRONIC CHARGE DENSITY AT NUCLEAR SITES IN BERYLLIUM METAL: DEPENDENCE ON LATTICE CONSTANTSKOILLER B; FALICOV LM.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 12; NO 6; PP. 2080-2083; BIBL. 9 REF.Article

ELECTRONIC SURFACE STRUCTURE OF A TETRAHEDRALLY COORDINATED BINARY COMPOUND.YNDURAIN F; FALICOV LM.1975; J. PHYS. C; G.B.; DA. 1975; VOL. 8; NO 10; PP. 1571-1580; BIBL. 11 REF.Article

HOLE CYCLOTRON MASSES IN SILICON MOS DEVICES.FALICOV LM; GARCIA N.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 17; NO 4; PP. 473-475; BIBL. 8 REF.Article

NEW THEORY OF BINARY ALLOYS WITH SHORT-RANGE ORDER PROPERTIES.YNDURAIN F; FALICOV LM.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 17; NO 12; PP. 1545-1548; BIBL. 13 REF.Article